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Magazine Name : Ieee Transactions On Electron Devices
Year : 2002Volume number : 49Issue:10
Anonquasi-Static Table-Based Small-Signal Model Of Heterojunciton Bipolar Transistor(Article) Subject:
Compound Semiconductor Devices
Author:
S.
Ko
K.
Koh
page:
1681
-
1686
Improved Temperature-Dependent Performances Of A Novel Ingap-Ingaas-Gaas Double Channel Pseudomorphic High Electro Mobility Transistor (Dc-Phemt)(Article) Subject:
Compound Semiconductor Devices
Author:
K.H.
Yu
page:
1687
-
1693
30-Nm Two-Step Recess Gate Inp-Based Inalas/Ingaas Hemts(Article) Subject:
Compound Semiconductor Devices
Author:
T.
Suemitsu
Y
Yokoyama
T
Ishii
page:
1694
-
1700
Equivalent Circuit Model For A Thz Detector Based On The Double-Electron Layer Tunneling Transistor (Deltt)(Article) Subject:
Compound Semiconductor Devices
Author:
M. M.
Khodier
page:
1701
-
1708
Modeling Of The Resistive Losses Due To The Bus-Bar And External Connecitons In Iii-V High-Concentrator Solar Cells(Article) Subject:
Compound Semiconductor Devices
Author:
I.
Rey-Stolle
page:
1709
-
1714
Design And Fabrication Of Highly Efficient Gan-Basedlight-Emitting Diodes(Article) Subject:
Compound Optoelectronics Displays And Imaging
Author:
H.
Kim
page:
1715
-
1722
Statistical Profiling Of Silc Spot In Flash Memories(Article) Subject:
Reliability
Author:
D.
Lelmini
page:
1723
-
1728
Silc Dynamics In Mos Structures Subject To Periodic Stress(Article) Subject:
Silicon Devices
Author:
I.
Irrera
page:
1729
-
1735
Improving The Quality Of Sub 1.5-Nm-Thick Oxynitride Gate Dielectric For Fets With Narrow Channel And Shallow-Trench Isolation Using Radical Oxygen And Nitrogen(Article) Subject:
Silicon Devices
Author:
M
Togo
K
Watanabe
page:
1736
-
1741
Soi Bulk And Surface Generaiton Properties Measured With The Pseudo-Mosfet(Article) Subject:
Silicon Devices
Author:
S. G.
Kang
page:
1742
-
1747
Advanced Source/Drain Engineering For Box-Shaped Ultrashallow Junction Formation Using Laser Annealing And Pre-Amorphization Implantation In Sub-100-Nm Soi Cmos(Article) Subject:
Silicon Devices
Author:
S D
Kim
page:
1748
-
1754
Optimization Of Characteristics Related To The Emitter-Base Junction Self-Aligned Seg Sige Hbts And Their Application In 72-Ghz-Static/92-Ghz-Dynamic Frequency Dividers(Article) Subject:
Silicon Devices
Author:
K
Washio
page:
1755
-
1760
Oxynitridation Using Radical-Oxygen And -Nitrogen For High-Performance And Highly Reliable N/P Fets(Article) Subject:
Silicon Devices
Author:
M
Togo
K
Watanabe
page:
1761
-
1767
Plasma-Induced Micro Breakdown In Small-Area Mosfets(Article) Subject:
Silicon Devices
Author:
Giorgio
Cellere
L
Larcher
M.
Valentini
page:
1768
-
1774
Off-Leakage And Drive Current Characteristics Of Sub-100-Nm Soi Mosfets And Impact Of Quantum Tunnel Current(Article) Subject:
Silicon Devices
Author:
H.
Nakajima
page:
1775
-
1782
Impurity-Profile-Based Threshold-Voltage Model Of Pocket-Implanted Mosfets For Circuit Simulation(Article) Subject:
Silicon Devices
Author:
H.
Ueno
D.
Kitamaru
M.
Morikawa
page:
1783
-
1789
Device Modeling Of Ferroelectric Memory Field-Effect Transistor (Femfet)(Article) Subject:
Solid-State Device Phenomena
Author:
H.T.
Lue
C. J
Wu
page:
1790
-
1798
Modeling Of Distributed Parasitics In Power Fets(Article) Subject:
Solid-State Device Phenomena
Author:
S.
Lee
Oriando
Lopez
page:
1799
-
1806
A Physics-Based High-Injection Transit-Time Model Applied To Barrier Effects In Sige Hbts(Article) Subject:
Solid-State Device Phenomena
Author:
Q
Liang
John D
Cressler
page:
1807
-
1813
Revision Of The Standard Hydrodynamic Transport Model For Soi Simulation(Article) Subject:
Solid-State Device Phenomena
Author:
M
Gritsch
S
Selberherr
page:
1814
-
1820
The Microthyristor Could Be Promising Microelectronics Device(Article) Subject:
Solid-State Power And High Voltage
Author:
A.
Zekry
page:
1821
-
1825
Simulation And Properties Of The Twined Helical Deflecting Structure(Article) Subject:
Vacuum Electron Devices
Author:
S.
Staras
page:
1826
-
1830
An Analysis Of The Anomalous Dip In Scattering Parameter S22 Of Ingap-Gaas Heterojuction Bipolar Transistors (Hbts)(Article) Subject:
Scattering Parameters
,
Bipolar Transistor
Author:
H. Y.
Tu
Y. S.
Lin
page:
1831
-
1832
A New 50-Nm N Mosfet With Side-Gates For Virtual Source-Drain Extensions(Article) Subject:
Mosfet
,
Drainage Condition
Author:
Y. J.
Choi
page:
1833
-
1835
Ion Implantation Impurity Profiles In Hfo2(Article) Subject:
Ion Implantation
Author:
K.
Suzuki
Y.
Morisaki
page:
1836
-
1838
Comments On "Modeling Of Small-Signal Minority-Carrier Transport In Bipolar Devices At Arbitrary Injection Levels"(Article) Subject:
Comments On "Modeling Of Small-Signal Minority-Carrier Transport In Bipolar Devices At Arbitrary Inj
Author:
J. S.
Hamel
page:
1839
-
1840
Comments On "The Early History Of Ibm'S Sige Mixed Signal Technology"(Article) Subject:
Comments On "The Early History Of Ibm'S Sige Mixed Signal Technology"
Author:
C. A
King
page:
1841
-
1841
Comments On "Inversion Charge Modeling"(Article) Subject:
Comments On "Inversion Charge Modeling"
Author:
C
Galup-Montoro
page:
1842
-
1843
Correction To "A Comparative Analysis Of Substrate Current Generation Mechanisms In Tunneling Mos Capacitors"(Article) Subject:
Correction To "A Comparative Analysis Of Substrate Current Generation Mechanisms In Tunneling Mos Ca
Author:
P
Palestri
page:
1844
-
1844