Your search returned 29 records. Click on the hyperlinks to view further details of Titles..

 

Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 10

Anonquasi-Static Table-Based Small-Signal Model Of Heterojunciton Bipolar Transistor (Article)
Subject: Compound Semiconductor Devices
Author: S. Ko      K. Koh     
page:      1681 - 1686
Improved Temperature-Dependent Performances Of A Novel Ingap-Ingaas-Gaas Double Channel Pseudomorphic High Electro Mobility Transistor (Dc-Phemt) (Article)
Subject: Compound Semiconductor Devices
Author: K.H. Yu     
page:      1687 - 1693
30-Nm Two-Step Recess Gate Inp-Based Inalas/Ingaas Hemts (Article)
Subject: Compound Semiconductor Devices
Author: T. Suemitsu      Y Yokoyama      T Ishii     
page:      1694 - 1700
Equivalent Circuit Model For A Thz Detector Based On The Double-Electron Layer Tunneling Transistor (Deltt) (Article)
Subject: Compound Semiconductor Devices
Author: M. M. Khodier     
page:      1701 - 1708
Modeling Of The Resistive Losses Due To The Bus-Bar And External Connecitons In Iii-V High-Concentrator Solar Cells (Article)
Subject: Compound Semiconductor Devices
Author: I. Rey-Stolle     
page:      1709 - 1714
Design And Fabrication Of Highly Efficient Gan-Basedlight-Emitting Diodes (Article)
Subject: Compound Optoelectronics Displays And Imaging
Author: H. Kim     
page:      1715 - 1722
Statistical Profiling Of Silc Spot In Flash Memories (Article)
Subject: Reliability
Author: D. Lelmini     
page:      1723 - 1728
Silc Dynamics In Mos Structures Subject To Periodic Stress (Article)
Subject: Silicon Devices
Author: I. Irrera     
page:      1729 - 1735
Improving The Quality Of Sub 1.5-Nm-Thick Oxynitride Gate Dielectric For Fets With Narrow Channel And Shallow-Trench Isolation Using Radical Oxygen And Nitrogen (Article)
Subject: Silicon Devices
Author: M Togo      K Watanabe     
page:      1736 - 1741
Soi Bulk And Surface Generaiton Properties Measured With The Pseudo-Mosfet (Article)
Subject: Silicon Devices
Author: S. G. Kang     
page:      1742 - 1747
Advanced Source/Drain Engineering For Box-Shaped Ultrashallow Junction Formation Using Laser Annealing And Pre-Amorphization Implantation In Sub-100-Nm Soi Cmos (Article)
Subject: Silicon Devices
Author: S D Kim     
page:      1748 - 1754
Optimization Of Characteristics Related To The Emitter-Base Junction Self-Aligned Seg Sige Hbts And Their Application In 72-Ghz-Static/92-Ghz-Dynamic Frequency Dividers (Article)
Subject: Silicon Devices
Author: K Washio     
page:      1755 - 1760
Oxynitridation Using Radical-Oxygen And -Nitrogen For High-Performance And Highly Reliable N/P Fets (Article)
Subject: Silicon Devices
Author: M Togo      K Watanabe     
page:      1761 - 1767
Plasma-Induced Micro Breakdown In Small-Area Mosfets (Article)
Subject: Silicon Devices
Author: Giorgio Cellere      L Larcher      M. Valentini     
page:      1768 - 1774
Off-Leakage And Drive Current Characteristics Of Sub-100-Nm Soi Mosfets And Impact Of Quantum Tunnel Current (Article)
Subject: Silicon Devices
Author: H. Nakajima     
page:      1775 - 1782
Impurity-Profile-Based Threshold-Voltage Model Of Pocket-Implanted Mosfets For Circuit Simulation (Article)
Subject: Silicon Devices
Author: H. Ueno      D. Kitamaru      M. Morikawa     
page:      1783 - 1789
Device Modeling Of Ferroelectric Memory Field-Effect Transistor (Femfet) (Article)
Subject: Solid-State Device Phenomena
Author: H.T. Lue      C. J Wu     
page:      1790 - 1798
Modeling Of Distributed Parasitics In Power Fets (Article)
Subject: Solid-State Device Phenomena
Author: S. Lee      Oriando Lopez     
page:      1799 - 1806
A Physics-Based High-Injection Transit-Time Model Applied To Barrier Effects In Sige Hbts (Article)
Subject: Solid-State Device Phenomena
Author: Q Liang      John D Cressler     
page:      1807 - 1813
Revision Of The Standard Hydrodynamic Transport Model For Soi Simulation (Article)
Subject: Solid-State Device Phenomena
Author: M Gritsch      S Selberherr     
page:      1814 - 1820
The Microthyristor Could Be Promising Microelectronics Device (Article)
Subject: Solid-State Power And High Voltage
Author: A. Zekry     
page:      1821 - 1825
Simulation And Properties Of The Twined Helical Deflecting Structure (Article)
Subject: Vacuum Electron Devices
Author: S. Staras     
page:      1826 - 1830
An Analysis Of The Anomalous Dip In Scattering Parameter S22 Of Ingap-Gaas Heterojuction Bipolar Transistors (Hbts) (Article)
Subject: Scattering Parameters , Bipolar Transistor
Author: H. Y. Tu      Y. S. Lin     
page:      1831 - 1832
A New 50-Nm N Mosfet With Side-Gates For Virtual Source-Drain Extensions (Article)
Subject: Mosfet , Drainage Condition
Author: Y. J. Choi     
page:      1833 - 1835
Ion Implantation Impurity Profiles In Hfo2 (Article)
Subject: Ion Implantation
Author: K. Suzuki      Y. Morisaki     
page:      1836 - 1838
Comments On "Modeling Of Small-Signal Minority-Carrier Transport In Bipolar Devices At Arbitrary Injection Levels" (Article)
Subject: Comments On "Modeling Of Small-Signal Minority-Carrier Transport In Bipolar Devices At Arbitrary Inj
Author: J. S. Hamel     
page:      1839 - 1840
Comments On "The Early History Of Ibm'S Sige Mixed Signal Technology" (Article)
Subject: Comments On "The Early History Of Ibm'S Sige Mixed Signal Technology"
Author: C. A King     
page:      1841 - 1841
Comments On "Inversion Charge Modeling" (Article)
Subject: Comments On "Inversion Charge Modeling"
Author: C Galup-Montoro     
page:      1842 - 1843
Correction To "A Comparative Analysis Of Substrate Current Generation Mechanisms In Tunneling Mos Capacitors" (Article)
Subject: Correction To "A Comparative Analysis Of Substrate Current Generation Mechanisms In Tunneling Mos Ca
Author: P Palestri     
page:      1844 - 1844